High-performance n-type thin-film transistor based on bilayer MXene/semiconductor with enhanced electrons transport

Interfacial engineering at the dielectric/semiconductor interface is highly crucial for fabricating organic field-effect transistors with high performance. In this study, a bilayer MXene/semiconductor configuration introduced to fabricate high-performance n-type transistor, where electrical charges are formed and modulated SiO2/semiconductor interface, MXene nanosheets serve as primary charge channel due their mobility long lateral size. The performance optimized by adjusting degree of connectivity nanosheets. proposed MXene/poly{[N,N′-bis(2-octyl-do-decyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5′-(2,2′-bithiophene)} (N2200) show boosted characteristics, including 100-fold increase in mobility, large ON/OFF ratio 104, small subthreshold swing 0.65 V dec−1, all which significantly improved compared single-layer N2200 transistors. two-dimensional nanochannel its electronegativity mobility. enhances electron transfer from channel, they efficiently transported along channel. Interestingly, MXene/p-type semiconductor suppressed p-type because negative Additionally, MXene/n-type shows good generality These findings demonstrate feasibility using combination.